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MOSFET IRF540
IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

IRF9540N MOSFET - 100V 23A P-Channel Power MOSFET TO-220 Package

SKU: A51A
₹50.00Price
Excluding Sales Tax

  • • Dynamic dV/dt rating

    • Repetitive avalanche rated

    • Fast switching

    • Ease of paralleling

    • Simple drive requirements

    • Compliant to RoHS directive 2002/95/EC

  • Number of Channels 1 Channel
    Transistor Polarity N-Channel
    Drain-Source Breakdown Voltage (Vds) 100V
    Continuous Drain Current (Id) 33A
    Drain-Source Resistance (Rds On) 44mOhms
    Gate-Source Voltage (Vgs) 20V
    Gate Charge (Qg) 71 nC
    Operating Temperature Range -55 - 175°C
    Power Dissipation (Pd) 130W
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