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BD139 NPN Epitaxial Silicon Power Transistor
BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

BD139 NPN Epitaxial Silicon Power Transistor

SKU: A52A
₹16.00Price
Excluding Sales Tax

  • • Low saturation voltage

    • Simple drive requirements

    • High safe operating area

    • For low distortion complementary designs

    • Easy to carry and handle

  • Transistor Polarity NPN
    Collector−Emitter Voltage (VCEO) 80V
    Collector−Base Voltage (VCBO) 80V
    Continuous Collector Current (Ic) 1.5A
    Continuous Base Current (Ib) 0.5A
    DC Current Gain (hFE) 40-250
    Operating Temperature Range -65 - 150°C
    Power Dissipation (Pd) 12.5W
    Thermal Resistance (ΘJA) 100°C/W
    Thermal Resistance (ΘJC) 10°C/W
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